A Mahmoudi, M Bouaziz, D Romanin, M Pala, A Thieffry, T Brulé, J Chaste, ... Physical Review B 110 (16), 165418

M Boutchich, K Fukumoto, A Mahmoudi, A Jaffré, J Alvarez, D Alamarguy, ... ACS Applied Electronic Materials 6 (9), 6484-6492

A Chiout, C Brochard-Richard, F Oehler, A Ouerghi, J Chaste Nano Letters 24 (33), 10148-10154

M Bouaziz, A Mahmoudi, D Romanin, JC Girard, YJ Dappe, F Bertran, ... Physical Review B 110 (4), 045441

M Rahimi, K Sobnath, L Chen, F Mallet, P Lafarge, C Barraud, A Alekhin, ...Applied Physics Letters 124 (25)

N Chapuis, A Mahmoudi, C Coinon, D Troadec, D Vignaud, G Patriarche, ...2D Materials

Q Guillet, H Boukari, F Choueikani, P Ohresser, A Ouerghi, F Mesple, ... Applied Physics Letters 124 (20)

174) High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence

A Chiout, A Tempez, T Carlier, M Chaigneau, F Cadiz, A Rowe, B Zheng, ...Advanced Optical Materials 12 (14), 2302369

173) Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe₂ Probed by THz Spintronic Emission

K Abdukayumov, M Mičica, F Ibrahim, L Vojáček, C Vergnaud, A Marty, ... Advanced Materials 36 (14), 2304243

172) Stacking order and electronic band structure in MBE-grown trilayer  films

A Mahmoudi, M Bouaziz, N Chapuis, F Oehler, P Dudin, D Romanin, ...Physical Review B 109 (11), 115437

171) Hydrogenic spin-valley states of the bromine donor in 2H-MoTe2.

Sheina, V., Lang, G., Stolyarov, V., Marchenkov, V., Naumov, S., Perevalova, A., ... & Aubin, H. (2023). Communications Physics, 6(1), 135.

170) Reconfigurable multifunctional van der Waals ferroelectric devices and logic circuits. 

Ram, A., Maity, K., Marchand, C., Mahmoudi, A., Kshirsagar, A. R., Soliman, M., ... & Dayen, J. F. (2023). ACS nano, 17(21), 21865-21877.

169) Epitaxial van der Waals heterostructures of Cr 2 Te 3 on two-dimensional materials.

Guillet, Q., Vojáček, L., Dosenovic, D., Ibrahim, F., Boukari, H., Li, J., ... & Jamet, M. (2023). Physical Review Materials, 7(5), 054005.

168) Straintronique et transport thermique dans les matériaux 2D

Chaste, J. (2023).  (HDR, Doctoral dissertation, Université Paris Saclay).

167) Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP (111) Heterostructure. 

Mahmoudi, A., Bouaziz, M., Chapuis, N., Kremer, G., Chaste, J., Romanin, D., ... & Ouerghi, A. (2023). ACS nano, 17(21), 21307-21316.

166) Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride.

Bouaziz, M., Mahmoudi, A., Kremer, G., Chaste, J., Gonzalez, C., Dappe, Y. J., ... & Ouerghi, A. (2023). Physical Review Research, 5(3), 033152.

165) Observations of the synthesis of straight single wall carbon nanotubes directed by electric fields in an Environmental Transmission Electron Microscope.

Vincent, P., Panciera, F., Florea, I., Blanchard, N., Cojocaru, C. S., Ezzedine, M., ... & Legagneux, P. (2023) Carbon, 213, 118272.

164) Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments

Zheng, B., Zribi, J., Zhu, C., Avila, J., Chaste, J., Sun, X., ... & Pan, A. (2023). Chemistry of Materials, 35(17), 6745-6753.

163) Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3

Kremer, G., Mahmoudi, A., M’Foukh, A., Bouaziz, M., Rahimi, M., Della Rocca, M. L., ... & Ouerghi, A. (2023). . ACS nano, 17(19), 18924-18931.

162) Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition

Mahmoudi, A., Bouaziz, M., Chiout, A., Di Berardino, G., Ullberg, N., Kremer, G., ... & Ouerghi, A. (2023). Physical Review B, 108(4), 045417.

161) Direct observation of highly anisotropic electronic and optical nature in indium telluride

Kremer, G., Mahmoudi, A., Bouaziz, M., Brochard-Richard, C., Khalil, L., Pierucci, D., ... & Ouerghi, A. (2023). . Physical Review Materials, 7(7), 074601.

160) In-Situ Direct Observation of Carbon Nanotube Synthesis Under Electric Field and Their Field Emission Performance

Vincent, P., Panciera, F., Florea, I., Cojocaru, C., Perisanu, S., Ayari, A., ... & Purcell, S. T. (2023, July). . In 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC) (pp. 120-121). IEEE.

Nizar, B. M., Lajnef, M., Chaste, J., Chtourou, R., & Herth, E. (2023). Highly C-oriented (002) plane ZnO nanowires synthesis. RSC advances, 13(22), 15077-15085.

Q Guillet, L Vojáček, D Dosenovic, F Ibrahim, H Boukari, J Li, ...Physical Review Materials 7 (5), 054005

I Castillo, T Sohier, M Paillet, D Cakiroglu, C Consejo, C Wen, ...Nanotechnology

A Chiout, C Brochard-Richard, L Marty, N Bendiab, MQ Zhao, AT Johnson, ...npj 2D Materials and Applications 7 (1), 1-8

The frequency of a musical instrument, such as a guitar string, is tunable over more than one octave, i.e. a ratio of two between the maximum and minimum frequency. It is defined as f=(k/m)^0.5 where k is the spring constant and m the mass of the resonator. To be successfully integrated into devices or sensors, the resonator frequency must be tuned. When the dimensions are reduced to nanometer sizes, such precise tuning is difficult to achieve in-situ. There is therefore a demand for simple and robust techniques to tune mechanical resonances at the nanoscale, and for nanoresonators that can be tuned over a wide frequency window. Among different nanoresonators, carbon nanotubes and two-dimensional (2D) materials have shown the best performance for mechanical frequency tuning, Here we design a thermally tuned nanomechanical resonator, using Joule heating and a very low electrical voltage, which lies at the interface between thermal transport in 2D materials and nanomechanics, with a focus on electrothermal actuation of mechanical vibrations and their frequency tuning.

Figure 14 - A suspended MoS₂ nanoguitar. (a) Schematic of the suspended MoS₂ membrane in a back-gated transistor configuration, laterally contacted by two gold electrodes (b) Optical microscopy image of the sample. The scale bar is 2µm (c) Mechanical response of the membrane near 35.6 MHz, as measured by our optical technique. (a) Variation of the frequency as a function of the heating voltage Vds. It shows a huge tunability of the frequency from 34 to 10 MHz. (b) Efficiency and amplitude values of our frequency variation for our work and other references on TMDs and 2D heterostructures.

M Soliman, K Maity, A Gloppe, A Mahmoudi, A Ouerghi, B Doudin, ...ACS Applied Materials & Interfaces 15 (12), 15732-15744

A Zaarour, V Malesys, J Teyssandier, M Cranney, E Denys, JL Bubendorff, ...Physical Review Research 5 (1), 013099

153) High p doped and robust band structure in Mg-doped hexagonal boron nitride

L Khalil, C Ernandes, J Avila, A Rousseau, P Dudin, ND Zhigadlo, ...Nanoscale Advances