2022
For individual Google Scholar profiles, see here: Abdelkarim Ouerghi , Fabrice Oehler , Julien Chaste
Publications
| 152) Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure
S Pierini, F Capitani, M Scimeca, S Kozlov, D Pierucci, R Alchaar, ...The Journal of Physical Chemistry Letters 13 (30), 6919-6926 |
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| 151) HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection
C Gréboval, E Izquierdo, C Abadie, A Khalili, M Cavallo, A Chu, TH Dang, ...ACS Applied Nano Materials |
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| 150) Ferromagnetism and Rashba Spin–Orbit Coupling in the Two-Dimensional (V,Pt)Se2 Alloy
E Vélez-Fort, A Hallal, R Sant, T Guillet, K Abdukayumov, A Marty, ...ACS Applied Electronic Materials 4 (1), 259-268 |
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| 149) Extended Short-Wave Photodiode Based on CdSe/HgTe/Ag2Te Stack with High Internal Efficiency
P Rastogi, E Izquierdo, C Gréboval, M Cavallo, A Chu, TH Dang, A Khalili, ...The Journal of Physical Chemistry C |
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| 148) Unidirectional Rashba spin splitting in single layer WS2 (1− x) Se2x alloy
J Zribi, D Pierucci, F Bisti, B Zheng, J Avila, L Khalil, C Ernandes, J Chaste, ...Nanotechnology 34 (7), 075705 |
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| 147) Visualizing Giant Ferroelectric Gating Effects in Large-Scale WSe2/BiFeO3 Heterostructures
R Salazar, S Varotto, C Vergnaud, V Garcia, S Fusil, J Chaste, ...Nano Letters 22 (23), 9260-9267 |
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| 146) Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer
L Khalil, D Pierucci, E Velez-Fort, J Avila, C Vergnaud, P Dudin, F Oehler, ...Nanotechnology 34 (4), 045702 |
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| 145) alpha-As2Te3 as a platform for the exploration of the electronic band structure of single layer
L Khalil, PM Forcella, G Kremer, F Bisti, J Chaste, JC Girard, F Oehler, ...Physical Review B 106 (12), 125152 |
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| 144) Electroluminescence of monolayer WS in a scanning tunneling microscope: the effect of bias polarity on the spectral and angular distribution of the emitted light
D Pommier, R Bretel, LEP López, E Lorchat, J Chaste, A Ouerghi, ...Physical Review B 106 (8) 085419 |
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| 143) Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe 2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
D Pierucci, A Mahmoudi, M Silly, F Bisti, F Oehler, G Patriarche, F Bonell, ...Nanoscale 14 (15), 5859-5868 |
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142)CMOS Compatible Al‐Doped ZnO Sol–Gel Thin‐Film Properties NB Moussa, M Lajnef, N Jebari, F Mahut, C Villebasse, X Lafosse, ...physica status solidi (a) 219 (7), 2100480 |
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