C2N – 2026

Centre for Nanoscience
and Nanotechnology

fr
en

Department of Materials

MAT2D Team

2026

For individual Google Scholar profiles, see here: Abdelkarim Ouerghi , Fabrice Oehler , Julien Chaste

Publications

200) Structural and electronic signatures of stacking and intralayer transitions in epitaxial bilayer WSe₂ on GaP(111)B M Bouaziz, S El Masaoudi, A Mahmoudi, N Chapuis, MG Silly, ... Nanoscale 18 (26), 13969-13978	link
199) Logic Functionality and Circuit Design of In₂Se₃‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications A Ram, C Marchand, SB Masood, A Mahmoudi, T Taniguchi, K Watanabe, ... Advanced Electronic Materials, e00871	link
198) The interfacial layer between layered chalcogenides and GaAs(111)B: The case of MBE-grown -GaAs(111)B M Eddrief, Y Zheng, J Kucharek, M Bouaziz, A Ouerghi, P Atkinson Physical Review Materials 10 (4), 044201	link
197) Nanostructured black TiN for enhanced photodetection under broadband visible illumination N Ben Moussa, R Subedi, G Hallais, J Chaste, G Guisbiers, L Rousseau, ... APL Electronic Devices 2 (2)	link
196) Epitaxial growth and electronic properties of quasi-free-standing rhombohedral bilayers on cubic W(110) N Chapuis, M Bouaziz, E Desgué, I Gerber, F Bertarn, P Legagneux, ... Physical Review Materials 10 (4), 044003	link
195) Extreme longitudinal thermal conductivity and non-diffusive heat transport in isotopic hBN C Brochard-Richard, G Di Berardino, E Herth, C Wei, F Panciera, T Poirier, ... Nature Communications 17 (1), 3352	link
194) Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing M Rahimi, N Lubertino, R Bellelli, L Chen, P Lafarge, C Barraud, F Mallet, ... Physical Review Applied 25 (2), 024039	link