2012 and before
2012
| 39) Epitaxial graphene on 4H-SiC (0001) grown under nitrogen flux: Evidence of low nitrogen doping and high charge transfer
Velez-Fort, E., Mathieu, C., Pallecchi, E., Pigneur, M., Silly, M. G., Belkhou, R., Marangolo, M., Shukla, A., Sirotti, F. & Ouerghi, A. ACS Nano 6, 10893–10900 (2012). |
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| 38) Local ion irradiation of thin graphene films grown on SiC substrates
Prével, B., Benoit, J.-M., Bardotti, L., Mélinon, P., Sato, A. M., Ouerghi, A., Lucot, D., Bourhis, E. & Gierak, J. Eng. 98, 206–209 (2012). |
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| 37) FIB carving of nanopores into suspended graphene films
Morin, A., Lucot, D., Ouerghi, A., Patriarche, G., Bourhis, E., Madouri, A., Ulysse, C., Pelta, J., Auvray, L., Jede, R. & others. Microelectron. Eng. 97, 311–316 (2012). |
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| 36) STM/STS investigation of edge structure in epitaxial graphene
Ridene, M., Girard, J., Travers, L., David, C. & Ouerghi, A. Surf. Sci. 606, 1289–1292 (2012). |
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| 35) Effect of oxygen adsorption on the local properties of epitaxial graphene on SiC (0001)
Mathieu, C., Lalmi, B., Menteş, T., Pallecchi, E., Locatelli, A., Latil, S., Belkhou, R. & Ouerghi, A. Phys. Rev. B 86, 035435 (2012). |
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| 34) Epitaxial graphene on single domain 3C-SiC (100) thin films grown on off-axis Si (100)
Ouerghi, A., Balan, A., Castelli, C., Picher, M., Belkhou, R., Eddrief, M., Silly, M., Marangolo, M., Shukla, A. & Sirotti, F. Appl. Phys. Lett. 101, 021603 (2012). |
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| 33) Large-area and high-quality epitaxial graphene on off-axis SiC wafers
Ouerghi, A., Silly, M. G., Marangolo, M., Mathieu, C., Eddrief, M., Picher, M., Sirotti, F, El Moussaoui, S. & Belkhou, R. Acs Nano 6, 6075–6082 (2012). |
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| 32) Observation of the quantum Hall effect in epitaxial graphene on SiC (0001) with oxygen adsorption
Pallecchi, E., Ridene, M., Kazazis, D., Mathieu, C., Schopfer, F., Poirier, W., Mailly, D. & Ouerghi, A. Appl. Phys. Lett. 100, 253109 (2012). |
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| 31) Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures
Daoudi, M., Dhifallah, I., Ouerghi, A. & Chtourou, R. 51, 497–505 (2012). |
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| 30) Control of the degree of surface graphitization on 3C-SiC (100)/Si (100)
Gogneau, N., Balan, A., Ridene, M., Shukla, A. & Ouerghi, A. Surf. Sci. 606, 217–220 (2012). |
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| 29) Graphene growth using propane‐hydrogen CVD on 6H‐SiC (0001): temperature dependent interface and strain
Michon, A., Largeau, L., Mauguin, O., Ouerghi, A., Vézian, S., Lefebvre, D., Roudon, E., Zielinski, M., Chassagne, T. & Portail, M. Phys. Status Solidi C 9, 175–178 (2012). |
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28) A nanomechanical mass sensor with yoctogram resolution. Chaste, J., Eichler, A., Moser, J., Ceballos, G., Rurali, R. & Bachtold, A. Nat. Nanotechnol. 7, 301 (2012). |
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2011
| 27) Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence
Prével, B., Benoit, J.-M., Bardotti, L., Mélinon, P., Ouerghi, A., Lucot, D., Bourhis, E. & Gierak, J.. Appl. Phys. Lett. 99, 083116 (2011). |
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26) Transport scattering time probed through rf admittance of a graphene capacitor. Pallecchi, E., Betz, A., Chaste, J., Fève, G., Huard, B., Kontos, T., Berroir, J.-M. & Plaçais, B. Phys. Rev. B 83, 125408 (2011). |
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| 25) Sharp interface in epitaxial graphene layers on 3 C-SiC (100)/Si (100) wafers
Ouerghi, A., Ridene, M., Balan, A., Belkhou, R., Barbier, A., Gogneau, N., Portail, M., Michon, A., Latil, S., Jegou, P. & others. Phys. Rev. B 83, 205429 (2011). |
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| 24)Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Lewińska, S., Gryglas-Borysiewicz, M., Przybytek, J., Baj, M., Jouault, B., Gennser, U. & Ouerghi, A. Acta Phys. Pol. A 119, 606–608 (2011). |
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23) Parametric amplification and self-oscillation in a nanotube mechanical resonator. Eichler, A., Chaste, J., Moser, J. & Bachtold, A. Nano Lett. 11, 2699–2703 (2011). |
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22) Nonlinear damping in mechanical resonators made from carbon nanotubes and graphene. Eichler, A., Moser, J., Chaste, J., Zdrojek, M., Wilson-Rae, I. & Bachtold, A. Nat. Nanotechnol. 6, 339 (2011). |
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| 21) Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells
Dhifallah, I., Daoudi, M., Bardaoui, A., Eljani, B., Ouerghi, A. & Chtourou, R. . J. Lumin. 131, 1007–1012 (2011). |
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20) High-frequency nanotube mechanical resonators. Chaste, J., Sledzinska, M., Zdrojek, M., Moser, J. & Bachtold, A. Appl. Phys. Lett. 99, 213502 (2011). |
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2010
| 19) Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
Michon, A., Vézian, S., Ouerghi, A., Zielinski, M., Chassagne, T. & Portail, M. Appl. Phys. Lett. 97, 171909 (2010). |
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18) Thermal shot noise in top-gated single carbon nanotube field effect transistors. Chaste, J., Pallecchi, E., Morfin, P., Fève, G., Kontos, T., Berroir, J.-M., Hakonen, P. & Plaçais, B. Appl. Phys. Lett. 96, 192103 (2010). |
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| 17) Structural coherency of epitaxial graphene on 3C–SiC (111) epilayers on Si (111)
Ouerghi, A., Belkhou, R., Marangolo, M., Silly, M., El Moussaoui, S., Eddrief, M., Largeau, L., Portail, M. & Sirotti, F. ,Appl. Phys. Lett. 97, 161905 (2010). |
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| 16) Epitaxial graphene on 3C-SiC (111) pseudosubstrate: Structural and electronic properties
Ouerghi, A., Marangolo, M., Belkhou, R., El Moussaoui, S., Silly, M., Eddrief, M., Largeau, L., Portail, M., Fain, B. & Sirotti, F. Phys. Rev. B 82, 125445 (2010). |
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| 15) Epitaxial graphene on cubic SiC (111)/Si (111) substrate
Ouerghi, A., Kahouli, A., Lucot, D., Portail, M., Travers, L., Gierak, J., Penuelas, J., Jegou, P., Shukla, A., Chassagne, T. & others. Appl. Phys. Lett. 96, 191910 (2010). |
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| 14) Atomic structure of the (3× 2) Si–GaAs (0 0 1) reconstructed surface: A clue to δ doping mechanism derived from in situ grazing incidence X-ray diffraction data
Sauvage-Simkin, M., Garreau, Y., Pinchaux, R., Coati, A., Ouerghi, A. & Etienne, B. Surf. Sci. 604, 415–419 (2010). |
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2009
| 13) Local tuning of CoPt nanoparticle size and density with a focused ion beam nanowriter
Penuelas, J., Ouerghi, A., Andreazza-Vignolle, C., Gierak, J., Bourhis, E., Andreazza, P., Kiermaier, J. & Sauvage, T. . Nanotechnology 20, 425304 (2009). |
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| 12) Deposition and FIB direct patterning of nanowires and nanorings into suspended sheets of graphene
Lucot, D., Gierak, J., Ouerghi, A., Bourhis, E., Faini, G. & Mailly, D. Microelectron. Eng. 86, 882–884 (2009). |
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| 11) Surface morphology and characterization of thin graphene films on SiC vicinal substrate
Penuelas, J., Ouerghi, A., Lucot, D., David, C., Gierak, J., Estrade-Szwarckopf, H. & Andreazza-Vignolle, C. Phys. Rev. B 79, 033408 (2009). |
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2008
| 10) Large scale atomic ordering on uncovered GaAs (0 0 1) after InAs monolayer capping: Atomic structure of the (12× 6) reconstruction
Ouerghi, A., Cavanna, A., Martrou, D., Garreau, Y. & Etienne, B. Surf. Sci. 602, 1631–1635 (2008). |
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| 9) Temperature effect on the ordering and morphology of CoPt nanoparticles
Penuelas, J., Andreazza-Vignolle, C., Andreazza, P., Ouerghi, A. & Bouet, N. Surf. Sci. 602, 545–551 (2008). |
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8) Single carbon nanotube transistor at GHz frequency Chaste, J., Lechner, L., Morfin, P., Feve, G., Kontos, T., Berroir, J.-M., Glattli, D., Happy, H., Hakonen, P. & Plaçais, B. Nano Lett. 8, 525–528 (2008). |
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2006
| 7) Chemical and structural aspects of CoPt silicide nanostructures grown on Si (100)
Ouerghi, A., Penuelas, J., Andreazza-Vignolle, C., Andreazza, P., Bouet, N. & Estrade-Szwarckopf, H. J. Appl. Phys. 100, 124310 (2006). |
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| 6) Growth and magnetic properties of MnAs epitaxied on GaAs (111) B
Varalda, J., de Oliveira, A., Ouerghi, A., Eddrief, M., Marangolo, M., Demaille, D., Etgens, V., Mattoso, N. & Mosca, D. B. J. Appl. Phys. 100, 093524 (2006). |
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| 5) Surface reconstructions of epitaxial MnAs films grown on GaAs (111)
Ouerghi, A., Marangolo, M., Eddrief, M., Lipinski, B., Etgens, V. H., Lazzeri, M., Cruguel, H., Sirotti, F., Coati, A. & Garreau, Y. B. Phys. Rev. B 74, 155412 (2006). |
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2004
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4) Enhancement of critical temperature and phases coexistence mediated by strain in MnAs epilayers grown on Ga As (111) Mattoso, N., Eddrief, M., Varalda, J., Ouerghi, A., Demaille, D., Etgens, V. H. & Garreau, Y. Phys. Rev. B 70, 115324 (2004). |
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2003
| 3) Surface structures of MnAs grown on GaAs (111) B substrates
Ouerghi, A., Marangolo, M., Eddrief, M., Guyard, S., Etgens, V. & Garreau, Y. Phys. Rev. B 68, 115309 (2003) |
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| 2) EPITAXIAL GROWTH AND MORPHOLOGY IN MnAs/GaAs (111) B
Mattoso, N., Ouerghi, A., Eddrief, M., Demaille, D. & Etgens, V. B. Acta Microsc. 12, (2003). |
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2002
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1) Growth morphology of MnAs epilayers on GaAs (1 1 1) substrates by molecular beam epitaxy. Etgens, V., Eddrief, M., Demaille, D., Zheng, Y. & Ouerghi, A.. J. Cryst. Growth 240, 64–72 (2002). |
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